PART |
Description |
Maker |
PDIP-40 |
A : MIN 3.300 MAX 4.200 B : MIN 0.018 MAX 0.570
|
Analog Microelectronics
|
MSMC-0102 MSMC-0104 MSMC-0103 MSMC-0105 MSMC-0100 |
PHOTOCELL,90mW,150V PEAK, 27KohmMAX LIGHT,2MohmMIN DARK PHOTOCELL,150mW,200VPK,3.6Kohm MAX LITE,0.3Mohm MIN DARK PHOTOCELL,90mW,150VPK,5Kohm, MAX LITE,20Mohm MIN DARK PHOTOCELL,400mW,350VPK,8Kohm MAX LITE,1Mohm MIN. DARK PHOTOCELL,100mW,150VPK,3Kohm, MAX LITE, 0.2Mohm MIN DARK PHOTOCELL,100mW,150VPK,80Kohm, MAX LITE,5Mohm MIN DARK CAP,CERM,DISC,470PF,1KV,20% CAP,CERM,DISC,0.047UF,1KV,20% AP,CERM,DISC,5PF,50V,20% INCREMENTS of 10 PHOTOCELL,90mW,150VPK,27Kohm, MAX LITE,0.3Mohm MIN DARK 医药0W的超小型开关电 PHOTOCELL,90mW,150VPK,10Kohm, MAX LITE,20Mohm MIN DARK 医药0W的超小型开关电
|
Astrodyne, Inc.
|
2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
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TC74AC273P07 TC74AC273P TC74AC273F |
CMOS Digital Integrated Circuit Silicon Monolithic Octal D-Type Flip Flop with Clear Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.42 to 4.61; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear Zener Diode; Application: General; Pd (mW): 200; Vz (V): 4.55 to 4.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP CMOS数字集成电路硅单片八路D类拖鞋与Clear
|
Toshiba Semiconductor Toshiba, Corp.
|
DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
TLSU12507 TLSU125F TLSU126 TLSU126F TLSU125 |
Panel Circuit Indicator Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.92; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Semiconductor Toshiba Corporation
|
TLWJ1100T11 TLWJ1100 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.37 to 13.96; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK Panel Circuit Indicator
|
Toshiba Corporation Toshiba Semiconductor
|
MSOP-10PP |
A1 : MIN 0.000 MAX 0.150 A2 : MIN 0.750 MAX 0.952
|
Analog Microelectronics
|
SOT-143 |
A : MIN 0.900 MAX 1.150 A1 : MIN 0.000 MAX 0.100
|
Analog Microelectronics
|
X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8 General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8 PS LINEAR DUAL 5V@6A 9-15@2.5A ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC; ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
|
Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] http://
|
TMP47P422VN TMP47P422VF TMP47P422VU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 的CMOS 4位微控制
|
Toshiba, Corp.
|
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